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Postdeposition annealing on VO2 films for resistive random-access memory selection devices

Title
Postdeposition annealing on VO2 films for resistive random-access memory selection devices
Author
전형탁
Keywords
HIGH-DENSITY; TRANSITION; SWITCH
Issue Date
2018-07
Publisher
A V S AMER INST PHYSICS
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v. 36, no. 5, Article no. 0510501
Abstract
In this study, VO2 films were deposited by thermal atomic layer deposition with vanadium oxytri-isopropoxide as a vanadium precursor and deionized water as a reactant. Postdeposition annealing was performed in order to enhance the crystallinity of VO2 films X-ray diffraction, scanning electron microscopy, atomic force microscopy, x-ray photoelectron spectroscopy, and transmission electron microscopy were used to characterize the physical and chemical properties of the as-deposited and annealed VO2 films. The results indicated that postdeposition annealing enhanced the crystallinity of the VO2 films and increased the area ratio of V4+. Finally, the electrical properties of the VO2 films were analyzed using a semiconductor parameter analyzer. The I-on/I-off ratio increased from 10(2) to 10(4) during postdeposition annealing at 450 degrees C. There were also significant increases in the hysteresis window. Published by the AVS.
URI
https://avs.scitation.org/doi/10.1116/1.5021082http://repository.hanyang.ac.kr/handle/20.500.11754/119364
ISSN
0734-2101; 1520-8559
DOI
10.1116/1.5021082
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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