Browsing "COLLEGE OF ENGINEERING SCIENCES[E](공학대학)" byAuthor백상현

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Showing results 20 to 49 of 85

Issue DateTitleAuthor(s)
2023-01DDR4 Ball Grid Array Package Intermittent Fracture Effect on Signal Integrity백상현
2023-01-23DDR4 Ball Grid Array Package Intermittent Fracture Effect on Signal Integrity백상현
2021-04DDR4 BER Degradation Due to Crack in FBGA Package Solder Ball백상현
2021-04DDR4 Data Channel Failure Due to DC Offset Caused by Intermittent Solder Ball Fracture in FBGA Package백상현
2007-12Delay Fault Coverage Enhancement by Partial Clocking For Low Power Designs with Heavily Gated Clocks백상현
2007-12Delay fault coverage enhancement by partial clocking for low-power designs with heavily gated clocks백상현
2011-03Design method of NOR-type comparison circuit in CAM with ground bounce noise considerations백상현
2011-06Designing ad-hoc scrubbing sequences to improve memory reliability against soft errors백상현
2022-05Divulge of Root Cause Failure in Individual Cells of 2x nm Technology DDR4 DRAM at Operating Temperature백상현
2011-07DRAM failure cases under hot-carrier injection백상현
2006-11Efficient Interconnect Test Patterns for Crosstalk and Static Faults백상현
2020-05Energy straggling and an experimental investigation of Bragg's rule for Am-241 alpha particles in air and its constituents백상현
2017-01Evaluation of SEU Performance of 28-nm FDSOI Flip-Flop Designs백상현
2019-08Experimental Exploitation of Random and Deterministic Data Patterns for Stringent DDR4 I/O Timing Margins백상현
2016-02Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 x nm technology백상현
2021-10Exploitations of Multiple Rows Hammering and Retention Time Interactions in DRAM Using X-Ray Radiation백상현
2020-10Failure Analysis of Galaxy S7 Edge Smartphone Using Neutron Radiation백상현
2018-09Failure signature analysis of power-opens in DDR3 SDRAMs백상현
2021-09Fault Coverage Re-Evaluation of Memory Test Algorithms With Physical Memory Characteristics백상현
2020-07FBGA solder ball defect e ff ect on DDR4 data signal rise time and ISI measured by loading the data line with a capacitor백상현
2020-11FBGA solder ball defect effect on DDR4 data signal rise time and ISI measured by loading the data line with a capacitor백상현
2012-12Hybrid Partitioned SRAM-Based Ternary Content Addressable Memory백상현
2008-12Hysteresis 버퍼를 이용한 AC 커플링 커패시터 테스트백상현
2015-04Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beams백상현
2008-03Low Power Configuration Strategy of TCAM Lookup백상현
2008-03Low power configuration strategy of TCAM lookup table백상현
2008-07Low Power Ternary Content-Addressable Memories (TCAM) Design Using Segmented Match-Line백상현
2008-07Low-Power Ternary Content-Addressable Memory Design Using a Segmented Match Line백상현
2013-04Memory Reliability Analysis for Multiple Block Effect of Soft Errors백상현
2010-04Minimizing Soft Errors in TCAM Devices: A Probabilistic Approach to Determining Scrubbing Intervals백상현

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