Extraction of Exposure Parameters for 193-nm Chemically Amplified Resist and Its Application to Simulation
- Title
- Extraction of Exposure Parameters for 193-nm Chemically Amplified Resist and Its Application to Simulation
- Author
- 오혜근
- Issue Date
- 2001-07
- Publisher
- 한국물리학회, v. 39, issue. 1, page. 152-156
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Abstract
- The exposure parameters for chemically amplified resists were characterized by measuring the transmittance and the thickness changes during exposure. A new approach to get the exposure parameters of a chemically amplified resist is needed since the transmittance behavior with respect to time exposure dose is much different from that of a conventional novolac resist. A dual mechanism, which includes: photo acid generation and acid-catalyzed deprotection during exposure, has been suggested to explain this. The exposure parameters for three 193-nm chemically amplified resists were extracted by using the dual mechanism. The newly obtained parameters were used in our in-house simulator. The simulation results show that the linewidth variation with post exposure bake temperature can be estimated.
- URI
- https://www.jkps.or.kr/journal/view.html?uid=4477&vmd=Fullhttps://repository.hanyang.ac.kr/handle/20.500.11754/160381
- ISSN
- 0374-4884
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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