Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오혜근 | - |
dc.date.accessioned | 2021-03-09T06:30:57Z | - |
dc.date.available | 2021-03-09T06:30:57Z | - |
dc.date.issued | 2001-07 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | en_US |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://www.jkps.or.kr/journal/view.html?uid=4477&vmd=Full | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/160381 | - |
dc.description.abstract | The exposure parameters for chemically amplified resists were characterized by measuring the transmittance and the thickness changes during exposure. A new approach to get the exposure parameters of a chemically amplified resist is needed since the transmittance behavior with respect to time exposure dose is much different from that of a conventional novolac resist. A dual mechanism, which includes: photo acid generation and acid-catalyzed deprotection during exposure, has been suggested to explain this. The exposure parameters for three 193-nm chemically amplified resists were extracted by using the dual mechanism. The newly obtained parameters were used in our in-house simulator. The simulation results show that the linewidth variation with post exposure bake temperature can be estimated. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | 한국물리학회, v. 39, issue. 1, page. 152-156 | en_US |
dc.title | Extraction of Exposure Parameters for 193-nm Chemically Amplified Resist and Its Application to Simulation | en_US |
dc.type | Article | en_US |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.googleauthor | Sohn, Y.-S. | - |
dc.contributor.googleauthor | Lee, E.-M. | - |
dc.contributor.googleauthor | Sung, M.-G. | - |
dc.contributor.googleauthor | Lee, Y.-M. | - |
dc.contributor.googleauthor | Bak, H.-J. | - |
dc.contributor.googleauthor | An, I. | - |
dc.contributor.googleauthor | Oh, H.-K. | - |
dc.relation.code | 2009205987 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | hyekeun | - |
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