Fabrication of Quantum Well Infrared Photodetectors using Chemically Wet-Etched Grid Nanostructures
- Title
- Fabrication of Quantum Well Infrared Photodetectors using Chemically Wet-Etched Grid Nanostructures
- Author
- 정희준
- Keywords
- quantum well; QWIP; wet etching; lateral quantization; GaAs
- Issue Date
- 2005-02
- Publisher
- INST PURE APPLIED PHYSICS
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v. 44, No. 2, Page. 1123-1127
- Abstract
- Quantum well infrared photodetectors were fabricated using a chemical wet etching method, defined on a GaAs/AlGaAs heterostructure. These devices utilized grid nanostructures for effective light coupling through the diffraction effect. By reducing grid widths close to the depletion of the quantum well, we observed a systematic increase in the normalized responsivity of the photodetectors, as a possible signature of the quantum size effect, with blue shift. We also achieved precise control of grid widths through wet etching that does not require an expensive processing instrument.
- URI
- https://iopscience.iop.org/article/10.1143/JJAP.44.1123https://repository.hanyang.ac.kr/handle/20.500.11754/110193
- ISSN
- 0021-4922
- DOI
- 10.1143/JJAP.44.1123
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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