Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정희준 | - |
dc.date.accessioned | 2019-09-04T05:22:54Z | - |
dc.date.available | 2019-09-04T05:22:54Z | - |
dc.date.issued | 2005-02 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v. 44, No. 2, Page. 1123-1127 | en_US |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.1143/JJAP.44.1123 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/110193 | - |
dc.description.abstract | Quantum well infrared photodetectors were fabricated using a chemical wet etching method, defined on a GaAs/AlGaAs heterostructure. These devices utilized grid nanostructures for effective light coupling through the diffraction effect. By reducing grid widths close to the depletion of the quantum well, we observed a systematic increase in the normalized responsivity of the photodetectors, as a possible signature of the quantum size effect, with blue shift. We also achieved precise control of grid widths through wet etching that does not require an expensive processing instrument. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | INST PURE APPLIED PHYSICS | en_US |
dc.subject | quantum well | en_US |
dc.subject | QWIP | en_US |
dc.subject | wet etching | en_US |
dc.subject | lateral quantization | en_US |
dc.subject | GaAs | en_US |
dc.title | Fabrication of Quantum Well Infrared Photodetectors using Chemically Wet-Etched Grid Nanostructures | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.44.1123 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & | - |
dc.contributor.googleauthor | Jeong, H | - |
dc.relation.code | 2012204500 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | hjeong | - |
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