2003-11 | A compact multilayer IC package model for efficient simulation, analysis, and design of high-performance VLSI circuits | 심종인 |
1996-10 | A computational method of determining reflectance at abrupt waveguide interfaces | 심종인 |
2004-09 | A decoupling technique for efficient timing analysis of VLSI interconnects with dynam.ic circuit switching | 심종인 |
2005-10 | A measurement method of the resonantly enhanced gain spectrum and its effect on second harmonic generation in Vertical-External-Cavity Surface-Emitting Laser (VECSEL) | 심종인 |
2008-05 | A method for current spreading analysis and electrode pattern design in light-emitting diodes | 심종인 |
2007-08 | A new method for measurement of the fundamental device parameters in a GaN-based light emitting diode | 심종인 |
2007-02 | A simple method for measurement of the alpha-factor in semiconductor Fabry-Perot lasers operating above threshold | 심종인 |
2002-06 | A traveling-wave-based waveform approximation technique for the timing verification of single transmission lines | 심종인 |
2011-04 | An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas | 심종인 |
2003-12 | Analog Characterization of Low-Voltage MQW Traveling-Wave Electroabsorption Modulators | 심종인 |
2017-04 | Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement | 심종인 |
2021-03 | Analysis of degradation mechanisms in GaN-based light-emitting diodes under reverse-bias stress: effects of defects and junction-temperature increase | 심종인 |
2014-03 | Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes | 심종인 |
2015-02 | Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation | 심종인 |
2012-03 | Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material | 심종인 |
2015-02 | Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes | 심종인 |
2016-01 | Analysis of the characteristics with increasing the number of QWs for near-ultraviolet LEDs | 심종인 |
2010-06 | Analysis of the stress distribution in the nonuniformly bent GaN thin film grown on a sapphire substrate | 심종인 |
2010-11 | Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation | 심종인 |
2021-08 | Analysis of transient degradation behaviors of organic light-emitting diodes under electrical stress | 심종인 |
2004-03 | Analytical Dynamic Time Delay Model of Strongly Coupled RLC Interconnect Lines Dependent on Switching | 심종인 |
2008-08 | An Analytical Model of the Intracavity Optical Second Harmonic Generation in a Vertical-External-Cavity Surface-Emitting Laser | 심종인 |
2004-04 | Analytical Models and Algorithms for the Efficient Signal Integrity Verification of Inductance-Effect-Prominent Multicoupled VLSI Circuit Interconnects | 심종인 |
2002-04 | Analytical Signal Integrity Verification Models for Inductance-Dominant Multi-Coupled VLSI Interconnects | 심종인 |
2011-02 | Antimony Surfactant Effect on Green Emission InGaN/GaN Multi Quantum Wells Grown by MOCVD | 심종인 |
2001-12 | Asymmetric Output Characteristics in 1.3-μm Spot-Size Converted Laser Diodes | 심종인 |
2017-10 | Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes | 심종인 |
2013-06 | Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures | 심종인 |
2015-12 | Carrier overflow in InGaN/GaN light-emitting diodes investigated by temperature-dependent short-circuit current characteristics | 심종인 |
2003-11 | A Compact Multi-Layer IC Package Model for Efficient Simulation, Analysis, and Design of High-Performance VLSI Circuits | 심종인 |