Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, article no. 4391579, Page. 979-980
Abstract
We propose a simple and new method which is able to characterize internal device parameters such as the internal quantum efficiency, nonradiative recombination rate, radiative recombination rate, and the internal carrier density in a light emitting diode. The method utilizes measurements of both the power versus current curve and the carrier lifetime.