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Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation

Title
Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation
Author
심종인
Keywords
RECOMBINATION
Issue Date
2015-02
Publisher
IOP PUBLISHING LTD
Citation
APPLIED PHYSICS EXPRESS, v. 8, no. 2
Abstract
"The efficiency droop in 280-nm AlGaN multiple-quantum-well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) is analyzed using the carrier rate equation. It is shown that the internal quantum efficiency (eta(IQE)), injection efficiency (eta(inj)), light-extraction efficiency (eta(LEE)), Shockley-Read-Hall recombination coefficient (A), and Auger coefficient (C) can be determined by the carrier rate equation using the theoretical radiative recombination coefficient (B), experimentally measured wavelength spectrum, and external quantum efficiency (eta(EQE)). The results show that the carrier spillover from the MQWs to the p-AlGaN layer is the main cause of the efficiency droop. (C) 2015 The Japan Society of Applied Physics."
URI
http://iopscience.iop.org/article/10.7567/APEX.8.022104/metahttp://hdl.handle.net/20.500.11754/35387
ISSN
1882-0778; 1882-0786
DOI
10.7567/APEX.8.022104
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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