Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures
- Title
- Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures
- Author
- 심종인
- Issue Date
- 2013-06
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v. 102, NO. 22, article no. 221109, Page. 1-5
- Abstract
- The carrier density dependence of the polarization switching characteristics of the light emission in deep-ultraviolet AlGaN/AlN quantum well structures was investigated using the multiband effective-mass theory and non-Markovian model. The critical Al composition from transverse electric (TE) to transverse-magnetic (TM) polarization decreases gradually with increasing carrier density. This can be explained by the fact that matrix elements for TM-polarization above the band-edge (k(parallel to) = 0) is much larger than those for TE-polarization. That is, the light emission for TM-polarization becomes larger than that for TE-polarization at higher carrier density because carriers will occupy higher states above k(parallel to) = 0 in the conduction and valence bands. As a result, the critical Al composition is reduced with increasing carrier density. Also, the critical Al composition is observed to decrease with increasing well width. (C) 2013 AIP Publishing LLC.
- URI
- https://aip.scitation.org/doi/10.1063/1.4809759https://repository.hanyang.ac.kr/handle/20.500.11754/184042
- ISSN
- 0003-6951;1077-3118
- DOI
- 10.1063/1.4809759
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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