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Issue DateTitleAuthor(s)
2012-12Vertically Partitioned SRAM-Based Ternary Content Addressable Memory백상현
2012-12Hybrid Partitioned SRAM-Based Ternary Content Addressable Memory백상현
2012-12Characterizing the Capacitive Crosstalk in SRAM Cells Using Negative Bit-Line Voltage Stress백상현
2013-04Memory Reliability Analysis for Multiple Block Effect of Soft Errors백상현
2013-11Soft error tolerant Content Addressable Memories (CAMs) using error detection codes and duplication백상현
2014-08An Efficient Multiple Cell Upsets Tolerant Content-Addressable Memory백상현
2014-10Novel Error Detection Scheme With the Harmonious Use of Parity Codes, Well-Taps, and Interleaving Distance백상현
2011-06Designing ad-hoc scrubbing sequences to improve memory reliability against soft errors백상현
2014-11Single Event Resilient Dynamic Logic Designs백상현
2015-04An SEU-Tolerant DICE Latch Design With Feedback Transistors백상현
2015-04Stuck Bits Study in DDR3 SDRAMs Using 45-MeV Proton Beam백상현
2017-07BPPT - Bulk potential protection technique for hardened sequentials백상현
2015-02Active-precharge hammering on a row induced failure in DDR3 SDRAMs under 3× nm technology백상현
2022-05Divulge of Root Cause Failure in Individual Cells of 2x nm Technology DDR4 DRAM at Operating Temperature백상현
2022-08Quantification of Substrate Current Caused by an Individual Trap at Different Locations and Energies, Prevailing on Si/SiO2 Interface or Si Substrate of n-MOSFETs백상현
2023-01DDR4 Ball Grid Array Package Intermittent Fracture Effect on Signal Integrity백상현
2023-01Temperature Estimation of HBM2 Channels with Tail Distribution of Retention Errors in FPGA-HBM2 Platform백상현
2015-04Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beams백상현
2020-11FBGA solder ball defect effect on DDR4 data signal rise time and ISI measured by loading the data line with a capacitor백상현
2007-0299㏈의 DR를 갖는단일-비트 4차 고성능 델타-시그마 모듈레이터 설계노정진

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