Memory Reliability Analysis for Multiple Block Effect of Soft Errors
- Title
- Memory Reliability Analysis for Multiple Block Effect of Soft Errors
- Author
- 백상현
- Keywords
- Memory; multiple blocks; multiple bit upset; multiple cell upset; single bit upset; single event upset; soft error
- Issue Date
- 2013-04
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v. 60, NO. 2, Page. 1384-1389
- Abstract
- Multiple bit upsets (MBU) are analyzed from the perspective of the number of accessed blocks (NAB) in multiple memory block structures. The NAB represents the number of accessed blocks for a single memory operation. Statistical model of the MBU with regards to the NAB is developed, and its correlation to the test results presented. The tests were performed with neutron irradiation facility at The Svedberg Laboratory. The NAB in structure of multiple memory blocks is one of the most important parameter in determining the reliability of the memory. Although multiple cell upsets can be effectively spread out as multiple single bit upsets by interleaving distance scheme, the word failure rates are increased by combination of multiple events from multiple memory blocks. The proposed model can be effectively used for the estimation of the mean time to the failure with different design parameters during the early design states.
- URI
- https://ieeexplore.ieee.org/document/6496324https://repository.hanyang.ac.kr/handle/20.500.11754/183614
- ISSN
- 0018-9499;1558-1578
- DOI
- 10.1109/TNS.2013.2250519
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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