Hybrid Partitioned SRAM-Based Ternary Content Addressable Memory
- Title
- Hybrid Partitioned SRAM-Based Ternary Content Addressable Memory
- Author
- 백상현
- Keywords
- ANDing operation; APT; APTAG; BPT; hybrid partition; SRAM; TCAM
- Issue Date
- 2012-12
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, v. 59, NO. 12, Page. 2969-2979
- Abstract
- Although content addressable memory (CAM) provides fast search operation; however, CAM has disadvantages like low bit density and high cost per bit. This paper presents a novel memory architecture called hybrid partitioned static random access memory-based ternary content addressable memory (HP SRAM-based TCAM), which emulates TCAM functionality with conventional SRAM, thereby eliminating the inherited disadvantages of conventional TCAMs. HP SRAM-based TCAM logically dissects conventional TCAM table in a hybrid way (column-wise and row-wise) into TCAM sub-tables, which are then processed to be mapped to their corresponding SRAM memory units. Search operation in HP SRAM-based TCAM involves two SRAM accesses followed by a logical ANDing operation. To validate and justify our approach, 512 36 HP SRAM-based TCAM has been implemented in Xilinx Virtex-5 field programmable gate array (FPGA) and designed using 65-nm CMOS technology. Implementation in FPGA is advantageous and a beauty of our proposed TCAM because classical TCAMs cannot be implemented in FPGA. After a thorough analysis, we have concluded that energy/bit/search of the proposed TCAM is 85.72 fJ.
- URI
- https://ieeexplore.ieee.org/document/6323051https://repository.hanyang.ac.kr/handle/20.500.11754/183617
- ISSN
- 1549-8328;1558-0806
- DOI
- 10.1109/TCSI.2012.2215736
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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