Browsing "ELECTRICAL ENGINEERING(전자공학부)" byAuthor오재응

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Showing results 66 to 95 of 112

Issue DateTitleAuthor(s)
2015-01Nanomechanical measurement of astrocyte stiffness correlated with cytoskeletal maturation오재응
2000-11New technique for the thermal resistance measurement of power field effect transistors using cathodoluminescence오재응
2015-06Noise reduction of dry vacuum pump using the boundary element method to model impeller blade passage frequency오재응
2016-06Noise reduction of the automobile multi-mode muffler using differential gap control and neural network control오재응
2016-12Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3 MBE오재응
2006-10Observation of V-shaped defects in the growth of In0.8Al0.2Sb/InSb layers: Temperature and V/III flux ratio dependences오재응
2008-01Optical anisotropy in ultraviolet InGaN/GaN quantum-well light-emitting diodes with a general crystal orientation오재응
1992-04OPTICAL CHARACTERIZATION OF COHERENTLY STRAINED SHORT-PERIOD SUPERLATTICE (INAS)N(ALAS)N GROWN BY MOLECULAR-BEAM EPITAXY오재응
2003-11Optical properties related to a two-dimensional electron gas at an AlGaN/GaN heterostructure오재응
2016-02Optimization and Performance Improvement of an Electromagnetic-type Energy Harvester with Consideration of Human Walking Vibration오재응
2012-07Phase Behaviors of AlN Layers Grown on Si(111) Substrate by Metalorganic Chemical Vapor Deposition: A Transmission Electron Microscopy Study오재응
2001-03Photo-Electrochemical Gate Recess Etching for the Fabrication of AlGaN/GaN Heterostructure Field Effect Transistor오재응
2001-03Photo-electrochemical gate recess etching for the fabrication of AlGaN/GaN heterostructure field effect transistor오재응
2004-12Photoluminescence studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy오재응
2004-12Photoluminescence studies of GaN nanorods on Si(111) substrates grown by molecualr=beam epitaxy오재응
2004-11Photoluminescince studies of GaN nanorods on Si(111) substrates grown by molecular-beam epitaxy오재응
2022-08Plasmonic Pt nanoparticles triggered efficient charge separation in TiO2/ GaN NRs hybrid heterojunction for the high performance self-powered UV photodetectors오재응
2003-07Polarity determination for GaN/AlGaN/GaN heterostructures grown on (0001) sapphire by molecular beam epitaxy오재응
2003-07Polarity determination for GaN/AlGaN/GaN heterostructures grown on(0001) sapphire by molecular epitaxy오재응
2021-06Proliferation of the Light and Gas Interaction with GaN Nanorods Grown on a V-Grooved Si(111) Substrate for UV Photodetector and NO2 Gas Sensor Applications오재응
2008-03Proximity-Scan ALD (PS-ALD) 에 의한 Al2O3와 HfO2 박막증착 기술 및 박막의 전기적 특성오재응
2005-04Pulsed current-voltage-temperature characteristics of AlGaN/GaN high electron mobility transistor under isothermal conditions오재응
2015-09Reduction in the moan noise by frequency-response-function-based substructuring and optimization techniques오재응
2016-04Reduction of radiated exterior noise from the flexible vibrating plate of a rectangular enclosure using multi-channel active control오재응
2008-09Reflection High-Energy Electron Diffraction Analysis of InN Grown on Si (111) with Molecular Beam Epitaxy오재응
1998-12Remote plasma-assisted metal organic chemical vapor deposition of tantalum nitride thin films with different radicals오재응
2000-07Room temperature far infrared (8 similar to 10 mu m) photodetectors using self-assembled InAs quantum dots with high detectivity오재응
2000-07Room temperature far infrared photodetectors using self-assembled InAs quantum dots with high detectivity오재응
2000-12Room-temperature Memory Operation of AlGaAs/GaAs High Electron Mobility Transistors embedded in the Channel오재응
2005-09Self-assembled GaN nano-rods grown directly on (111) Si substrates: Dependence on growth conditions오재응

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