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Observation of V-shaped defects in the growth of In0.8Al0.2Sb/InSb layers: Temperature and V/III flux ratio dependences

Title
Observation of V-shaped defects in the growth of In0.8Al0.2Sb/InSb layers: Temperature and V/III flux ratio dependences
Author
오재응
Keywords
defects; molecular beam epitaxy; antimonide; semiconducting III-V materials
Issue Date
2006-10
Publisher
ELSEVIER SCIENCE BV
Citation
JOURNAL OF CRYSTAL GROWTH, v. 296, No. 1, Page. 75-80
Abstract
In0.8Al0.2Sb/InSb layers were grown under various growth temperature and V/III flux ratio conditions on semi-insulating (001)oriented GaAs substrates by molecular beam epitaxy. The crystalline qualities of In0.8Al0.2Sb/InSb layers were improved by decreasing the V/III flux ratio at a fixed temperature (380 degrees C) and increasing the growth temperature of the fixed V/III ratio (6). Dislocations were only observed in the In0.8Al0.2Sb/InSb layers grown at the optimal condition. On the other hand, many planar defects, including microtwins, were observed when the In0.8Al0.2Sb/InSb layers were grown in the Sb-rich condition. Specifically, V-shaped defects drawn boundaries in the microtwins were observed in the In0.8Al0.2Sb/InSb layer. (c) 2006 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S0022024806007706https://repository.hanyang.ac.kr/handle/20.500.11754/108465
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2006.08.007
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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