Room temperature far infrared (8 similar to 10 mu m) photodetectors using self-assembled InAs quantum dots with high detectivity
- Title
- Room temperature far infrared (8 similar to 10 mu m) photodetectors using self-assembled InAs quantum dots with high detectivity
- Author
- 오재응
- Keywords
- infrared; photodetector; quantum dot; self-assembled
- Issue Date
- 2000-07
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE ELECTRON DEVICE LETTERS, v. 21, NO. 7, Page. 329-331
- Abstract
- A room temperature operation of far-infrared detectors made of self-assembled quantum dots embedded in the channel region of modulation-doped heterostructures is demonstrated. At room temperature, the detector shows a low dark current ranging in the nano-amperes at a bias voltage of 10 V. After the optimization of the separation between the quantum dot region and the 2DEG, a peak responsivity of 5.3 A/W is obtained at 9.0 mu m. The high detectivities of 6 x 10(8) and 5 x 10(10) cmHz(1/2)/W are obtained at room temperature and 80 K, respectively.
- URI
- https://ieeexplore.ieee.org/document/847370/https://repository.hanyang.ac.kr/handle/20.500.11754/182714
- ISSN
- 0741-3106;1558-0563
- DOI
- 10.1109/55.847370
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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