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Optical anisotropy in ultraviolet InGaN/GaN quantum-well light-emitting diodes with a general crystal orientation

Title
Optical anisotropy in ultraviolet InGaN/GaN quantum-well light-emitting diodes with a general crystal orientation
Author
오재응
Keywords
POLARIZATION ANISOTROPY; LASERS; GAIN
Issue Date
2008-01
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v. 92, No. 1, Article no. 011130
Abstract
The crystal orientation effect on optical anisotropy in ultraviolet InGaN/GaN quantum-well (QW) light-emitting diodes are investigated using the non-Markovian gain model with many-body effects. The spontaneous emission for the y ' polarization largely increases with a crystal angle because of the reduction in the spontaneous and piezoelectric polarizations. On the other hand, that for the x ' polarization is shown to reach a maximum near theta=24 degrees and begin to decrease when the crystal angle further increases. The absolute value of the anisotropy rapidly increases with a crystal angle and begins to saturate to be about one when a crystal angle exceeds about 50 degrees. This is because, in the case of QW structures with large crystal angles, the states constituting the topmost valence subband near the band edge become predominantly vertical bar Y '>-like.
URI
https://aip.scitation.org/doi/full/10.1063/1.2827581https://repository.hanyang.ac.kr/handle/20.500.11754/76695
ISSN
0003-6951
DOI
10.1063/1.2827581
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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