Photo-electrochemical gate recess etching for the fabrication of AlGaN/GaN heterostructure field effect transistor
- Title
- Photo-electrochemical gate recess etching for the fabrication of AlGaN/GaN heterostructure field effect transistor
- Author
- 오재응
- Keywords
- gate recess etching; Al0.2Ga0.8N/GaN; heterojunction field effect transistor; wet recess etching; photoresist etching mask
- Issue Date
- 2001-03
- Publisher
- INST PURE APPLIED PHYSICS
- Citation
- Japanese Journal of Applied Physics, Part 2: Letters, v. 40, issue. 3A, page. L198-L200
- Abstract
- This is the first report on wet gate recess etching for the fabrication of an Al0.2Ga0.8N/GaN heterojunction field effect transistors. Wet recess etching was performed using a photoresist etching mask without any additional dielectrics or metals. The rec etched surface was smooth and had no etch pits. After recess etching of a 300-Angstrom -thick n(+)-GaN cap layer, Schottky cor metals of Pt/Au were deposited on Al0.2Ga0.8N. Gate-to-drain breakdown voltage and gate leakage current at V-GD = 20 V were -80 V and -34 muA, respectively. The fabricated device exhibited a maximum drain current of 193 mA/mm and a maximum extrinsic transconductance of 62 mS/mm.
- URI
- https://iopscience.iop.org/article/10.1143/JJAP.40.L198https://repository.hanyang.ac.kr/handle/20.500.11754/158635
- ISSN
- 0021-4922
- DOI
- 10.1143/jjap.40.l198
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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