| 2015-09 | Identification of moan-noise generation mechanisms by an experimental method and verification of the mechanism by finite element analysis | 오재응 |
| 2017-02 | Improved Schottky behavior of GaN nanorods using hydrogen plasma treatment | 오재응 |
| 2014-05 | Improvement of noise reduction performance for a high-speed elevator using modified active noise control | 오재응 |
| 2004-12 | InAs/InGaAs quantum dot Mach-Zehnder modulator at 1.55 μm | 오재응 |
| 2006-06 | InAs/InGaAs 양자점을 이용한 전계광학변조기 | 오재응 |
| 2005-09 | Indium-related novel architecture of GaN nanorod grown by molecular beam epitaxy | 오재응 |
| 2015-06 | Influence of an embedded low-temperature AlN strain relaxation layer on the strain states and the buffer characteristics of GaN films grown on (110) Si substrates by using ammonia molecular beam epitaxy | 오재응 |
| 2015-09 | Influence of p-GaN shape on the light emission characteristics of InGaN nanodisk embedded p-i-n GaN nanorods | 오재응 |
| 2003-02 | Magnetotransport measurements through stacked InAs self-assembled quantum dots | 오재응 |
| 2003-02 | Mangototransport measurements through stacked InAs self- assembled quantum dots | 오재응 |
| 2009-07 | MBE법으로 Si(111) 기판 위 성장온도 변화에 따라 성장된 AlN 박막의 표면 특성 | 오재응 |
| 2015-02 | Microstructural characteristics of AlN thin layers grown on Si(110) substrates by molecular beam epitaxy: Transmission electron microscopy study | 오재응 |
| 2015-03 | Microstructural properties of GaN grown on a Si(110) substrate by gas-source molecular beam epitaxy: Dependence on the ammonia flux | 오재응 |
| 2002-04 | Microwave performance of recessed gate A10.2 Ga0.8 N/GaN HFETs fabricated using a photoelectrochemical etching technique | 오재응 |
| 2002-07 | Microwave performance of recessed gate Al0.2Ga0.8N/GaN HFETs fabricated using a photoelectrochemical etching technique | 오재응 |
| 2015-01 | Nanomechanical measurement of astrocyte stiffness correlated with cytoskeletal maturation | 오재응 |
| 2000-11 | New technique for the thermal resistance measurement of power field effect transistors using cathodoluminescence | 오재응 |
| 2015-06 | Noise reduction of dry vacuum pump using the boundary element method to model impeller blade passage frequency | 오재응 |
| 2016-06 | Noise reduction of the automobile multi-mode muffler using differential gap control and neural network control | 오재응 |
| 2016-12 | Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3 MBE | 오재응 |
| 2006-10 | Observation of V-shaped defects in the growth of In0.8Al0.2Sb/InSb layers: Temperature and V/III flux ratio dependences | 오재응 |
| 2008-01 | Optical anisotropy in ultraviolet InGaN/GaN quantum-well light-emitting diodes with a general crystal orientation | 오재응 |
| 1992-04 | OPTICAL CHARACTERIZATION OF COHERENTLY STRAINED SHORT-PERIOD SUPERLATTICE (INAS)N(ALAS)N GROWN BY MOLECULAR-BEAM EPITAXY | 오재응 |
| 2003-11 | Optical properties related to a two-dimensional electron gas at an AlGaN/GaN heterostructure | 오재응 |
| 2016-02 | Optimization and Performance Improvement of an Electromagnetic-type Energy Harvester with Consideration of Human Walking Vibration | 오재응 |
| 2012-07 | Phase Behaviors of AlN Layers Grown on Si(111) Substrate by Metalorganic Chemical Vapor Deposition: A Transmission Electron Microscopy Study | 오재응 |
| 2001-03 | Photo-Electrochemical Gate Recess Etching for the Fabrication of AlGaN/GaN Heterostructure Field Effect Transistor | 오재응 |
| 2001-03 | Photo-electrochemical gate recess etching for the fabrication of AlGaN/GaN heterostructure field effect transistor | 오재응 |
| 2004-12 | Photoluminescence studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy | 오재응 |
| 2004-12 | Photoluminescence studies of GaN nanorods on Si(111) substrates grown by molecualr=beam epitaxy | 오재응 |
