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A single event upset tolerant latch design

Title
A single event upset tolerant latch design
Author
백상현
Keywords
Single event upset; Latch; DICE; Charge sharing; Radiation effects
Issue Date
2018-09
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Citation
MICROELECTRONICS RELIABILITY, v. 88-90, No. Special SI, Page. 909-913
Abstract
This paper presents a single-event-upset tolerant latch design based on a redundant structure featuring four storage nodes (i.e. Quatro). The reference structure manifests single node upset issues when either of the two internal nodes is hit and observes a positive transient afterwards. Two OFF-state transistors are added to those two internal pull-up paths, suppressing positive transient. Simulation and experimental data demonstrate that the proposed design has smaller cross section and higher upset threshold than the reference design.
URI
https://www.sciencedirect.com/science/article/pii/S0026271418305614https://repository.hanyang.ac.kr/handle/20.500.11754/81406
ISSN
0026-2714
DOI
10.1016/j.microrel.2018.07.019
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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