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dc.contributor.author백상현-
dc.date.accessioned2019-01-22T02:30:24Z-
dc.date.available2019-01-22T02:30:24Z-
dc.date.issued2018-09-
dc.identifier.citationMICROELECTRONICS RELIABILITY, v. 88-90, No. Special SI, Page. 909-913en_US
dc.identifier.issn0026-2714-
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0026271418305614-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/81406-
dc.description.abstractThis paper presents a single-event-upset tolerant latch design based on a redundant structure featuring four storage nodes (i.e. Quatro). The reference structure manifests single node upset issues when either of the two internal nodes is hit and observes a positive transient afterwards. Two OFF-state transistors are added to those two internal pull-up paths, suppressing positive transient. Simulation and experimental data demonstrate that the proposed design has smaller cross section and higher upset threshold than the reference design.en_US
dc.description.sponsorshipThis work is supported by the Fundamental Research Funds for the Central Universities (2016B07414). This work is also supported by NSFC through Hohai University under contract No. 61504038 and through China Institute of Atomic Energy under contract No. 11690044.en_US
dc.language.isoen_USen_US
dc.publisherPERGAMON-ELSEVIER SCIENCE LTDen_US
dc.subjectSingle event upseten_US
dc.subjectLatchen_US
dc.subjectDICEen_US
dc.subjectCharge sharingen_US
dc.subjectRadiation effectsen_US
dc.titleA single event upset tolerant latch designen_US
dc.typeArticleen_US
dc.relation.noSpecial SI-
dc.relation.volume88-90-
dc.identifier.doi10.1016/j.microrel.2018.07.019-
dc.relation.page909-913-
dc.relation.journalMICROELECTRONICS RELIABILITY-
dc.contributor.googleauthorWang, Haibin-
dc.contributor.googleauthorDai, Xixi-
dc.contributor.googleauthorWang, Yangsheng-
dc.contributor.googleauthorNofal, Issam-
dc.contributor.googleauthorCai, Li-
dc.contributor.googleauthorShen, Zicai-
dc.contributor.googleauthorSun, Wanxiu-
dc.contributor.googleauthorBi, Jinshun-
dc.contributor.googleauthorLi, Bo-
dc.contributor.googleauthorBaeg, Sang-
dc.contributor.googleauthorGuo, Gang-
dc.contributor.googleauthorChen, Li-
dc.relation.code2018002127-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF ENGINEERING SCIENCES[E]-
dc.sector.departmentDIVISION OF ELECTRICAL ENGINEERING-
dc.identifier.pidbau-
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COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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