Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 백상현 | - |
dc.date.accessioned | 2019-01-22T02:30:24Z | - |
dc.date.available | 2019-01-22T02:30:24Z | - |
dc.date.issued | 2018-09 | - |
dc.identifier.citation | MICROELECTRONICS RELIABILITY, v. 88-90, No. Special SI, Page. 909-913 | en_US |
dc.identifier.issn | 0026-2714 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0026271418305614 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/81406 | - |
dc.description.abstract | This paper presents a single-event-upset tolerant latch design based on a redundant structure featuring four storage nodes (i.e. Quatro). The reference structure manifests single node upset issues when either of the two internal nodes is hit and observes a positive transient afterwards. Two OFF-state transistors are added to those two internal pull-up paths, suppressing positive transient. Simulation and experimental data demonstrate that the proposed design has smaller cross section and higher upset threshold than the reference design. | en_US |
dc.description.sponsorship | This work is supported by the Fundamental Research Funds for the Central Universities (2016B07414). This work is also supported by NSFC through Hohai University under contract No. 61504038 and through China Institute of Atomic Energy under contract No. 11690044. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | en_US |
dc.subject | Single event upset | en_US |
dc.subject | Latch | en_US |
dc.subject | DICE | en_US |
dc.subject | Charge sharing | en_US |
dc.subject | Radiation effects | en_US |
dc.title | A single event upset tolerant latch design | en_US |
dc.type | Article | en_US |
dc.relation.no | Special SI | - |
dc.relation.volume | 88-90 | - |
dc.identifier.doi | 10.1016/j.microrel.2018.07.019 | - |
dc.relation.page | 909-913 | - |
dc.relation.journal | MICROELECTRONICS RELIABILITY | - |
dc.contributor.googleauthor | Wang, Haibin | - |
dc.contributor.googleauthor | Dai, Xixi | - |
dc.contributor.googleauthor | Wang, Yangsheng | - |
dc.contributor.googleauthor | Nofal, Issam | - |
dc.contributor.googleauthor | Cai, Li | - |
dc.contributor.googleauthor | Shen, Zicai | - |
dc.contributor.googleauthor | Sun, Wanxiu | - |
dc.contributor.googleauthor | Bi, Jinshun | - |
dc.contributor.googleauthor | Li, Bo | - |
dc.contributor.googleauthor | Baeg, Sang | - |
dc.contributor.googleauthor | Guo, Gang | - |
dc.contributor.googleauthor | Chen, Li | - |
dc.relation.code | 2018002127 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | bau | - |
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