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Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone

Title
Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone
Author
박태주
Keywords
Atomic layer deposition (ALD); La formamidinate precursors; Ozone; La2O3; High-k gate dielectrics; OXIDE THIN-FILMS; LANTHANUM OXIDE; GATE DIELECTRICS
Issue Date
2009-07
Publisher
ELSEVIER SCIENCE BV
Citation
MICROELECTRONIC ENGINEERING, v. 86, No. 7-9, Page. 1658-1661
Abstract
La2O3 films were grown by atomic layer deposition technique using a novel formamidinate precursor, tris(N,N′-diisopropylformamidinato) lanthanum [La(iPrfAMD)3], with H2O and O3 as an oxidant. La2O3 films grown with H2O in the film exhibited a parasitic chemical vapor deposition type growth possibly due to a La(OH)x component. However, the use of O3 as the oxidant revealed a stable ALD process window. A post-deposition annealing (PDA) of the deposited La2O3 films using O3 significantly reduces leakage current density by four orders of magnitude relative to as-deposited samples. The dielectric constant of La2O3 films with a TaN metal gate is found to be ∼29, which is higher than reported values for CVD and ALD La2O3 films.
URI
https://www.sciencedirect.com/science/article/pii/S0167931709002238https://repository.hanyang.ac.kr/handle/20.500.11754/76279
ISSN
0167-9317
DOI
10.1016/j.mee.2009.03.056
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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