Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박태주 | - |
dc.date.accessioned | 2018-10-01T06:33:07Z | - |
dc.date.available | 2018-10-01T06:33:07Z | - |
dc.date.issued | 2009-07 | - |
dc.identifier.citation | MICROELECTRONIC ENGINEERING, v. 86, No. 7-9, Page. 1658-1661 | en_US |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0167931709002238 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/76279 | - |
dc.description.abstract | La2O3 films were grown by atomic layer deposition technique using a novel formamidinate precursor, tris(N,N′-diisopropylformamidinato) lanthanum [La(iPrfAMD)3], with H2O and O3 as an oxidant. La2O3 films grown with H2O in the film exhibited a parasitic chemical vapor deposition type growth possibly due to a La(OH)x component. However, the use of O3 as the oxidant revealed a stable ALD process window. A post-deposition annealing (PDA) of the deposited La2O3 films using O3 significantly reduces leakage current density by four orders of magnitude relative to as-deposited samples. The dielectric constant of La2O3 films with a TaN metal gate is found to be ∼29, which is higher than reported values for CVD and ALD La2O3 films. | en_US |
dc.description.sponsorship | The authors would like to thank Rohm and Haas Electronic Materials LLC for financial support and providing the La precursors. We also acknowledge partial financial support through system IC 2010 program of COSAR (funded by MKE in Korea) and Toshiba Mitsubishi–Electric Industrial Systems Corporation (TMEIC) for the ozone generator used on this work. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Atomic layer deposition (ALD) | en_US |
dc.subject | La formamidinate precursors | en_US |
dc.subject | Ozone | en_US |
dc.subject | La2O3 | en_US |
dc.subject | High-k gate dielectrics | en_US |
dc.subject | OXIDE THIN-FILMS | en_US |
dc.subject | LANTHANUM OXIDE | en_US |
dc.subject | GATE DIELECTRICS | en_US |
dc.title | Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone | en_US |
dc.type | Article | en_US |
dc.relation.no | 7-9 | - |
dc.relation.volume | 86 | - |
dc.identifier.doi | 10.1016/j.mee.2009.03.056 | - |
dc.relation.page | 1658-1661 | - |
dc.relation.journal | MICROELECTRONIC ENGINEERING | - |
dc.contributor.googleauthor | Lee, B. | - |
dc.contributor.googleauthor | Park, T.J. | - |
dc.contributor.googleauthor | Hande, A. | - |
dc.contributor.googleauthor | Kim, M.J. | - |
dc.contributor.googleauthor | Wallace, R.M. | - |
dc.contributor.googleauthor | Kim, J. a, | - |
dc.contributor.googleauthor | Liu, X. | - |
dc.contributor.googleauthor | Yi, J.H. | - |
dc.contributor.googleauthor | Li, H. | - |
dc.contributor.googleauthor | Rousseau, M. | - |
dc.contributor.googleauthor | Shenai, D. | - |
dc.contributor.googleauthor | Suydam, J. | - |
dc.relation.code | 2009206695 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | tjp | - |
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