그림자 효과 완화 및 내화학성 향상을 위한 탄탈륨-니켈 화합물 극자외선 흡수체
- Title
- 그림자 효과 완화 및 내화학성 향상을 위한 탄탈륨-니켈 화합물 극자외선 흡수체
- Other Titles
- Ta-Ni Compound EUV Absorber Material to Mitigate Shadowing Effect and Improve Chemical Durability
- Author
- 안진호
- Keywords
- extreme ultraviolet lithography; semiconductor; sputtering; optical properties; computer
- Issue Date
- 2016-07
- Publisher
- 대한금속·재료학회
- Citation
- 대한금속·재료학회지, v. 54, NO 7, Page. 546-551
- Abstract
- Extreme ultraviolet lithography (EUVL) runs in reflective optics and the shadowing effect causes several new issues limiting the performance of EUV mask. To get over this shadowing effect, many studies are made by reducing the absorber thickness with high extinction coefficient materials. Nickel is a promising absorber material candidate which can replace tantalum compounds due to its high extinction coefficient. However, nickel is vulnerable to conventional mask cleaning process. In this paper, novel Ta-Ni compound material is fabricated by co-sputtering process and its improved chemical durability and shadowing effect is presented. †(Received April 25, 2016; Accepted May 4, 2016)
- URI
- http://210.101.116.102/journal_korea/detail_01.asp?a_key=3443518https://repository.hanyang.ac.kr/handle/20.500.11754/74413
- ISSN
- 1738-8228
- DOI
- 10.3365/KJMM.2016.54.7.546
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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