Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory
- Title
- Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory
- Author
- 송윤흡
- Keywords
- THIN-FILMS; GE2SB2TE5
- Issue Date
- 2016-06
- Publisher
- ELSEVIER SCI LTD
- Citation
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v. 47, Page. 1-6
- Abstract
- We have investigated the contact resistivity of GeCu2Te3 (GCT) phase change material to a W electrode using the circular transfer length method (CTLM). The contact resistivity rho(c) of as-deposited amorphous GCT to W was 3.9 x 10(-2) Omega cm(2). The value of rho(c) drastically decreased upon crystallization and crystalline GCT that annealed at 300 degrees C showed a rho(c) of 4.8 x 10(-6) Omega cm(2). The rho(c) contrast between amorphous (as-deposited) and crystalline (annealed at 300 degrees C) states was larger in GCT than in conventional Ge2Sb2Te5 (GST). Consequently, it was suggested from a calculation based on a simple vertical structure memory cell model that a GCT memory cell shows a four times larger resistance contrast than a GST memory cell. (C) 2016 Elsevier Ltd. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S1369800116300270?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/72695
- ISSN
- 1369-8001; 1873-4081
- DOI
- 10.1016/j.mssp.2016.02.006
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML