Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 송윤흡 | - |
dc.date.accessioned | 2018-07-24T06:03:34Z | - |
dc.date.available | 2018-07-24T06:03:34Z | - |
dc.date.issued | 2016-06 | - |
dc.identifier.citation | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v. 47, Page. 1-6 | en_US |
dc.identifier.issn | 1369-8001 | - |
dc.identifier.issn | 1873-4081 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S1369800116300270?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/72695 | - |
dc.description.abstract | We have investigated the contact resistivity of GeCu2Te3 (GCT) phase change material to a W electrode using the circular transfer length method (CTLM). The contact resistivity rho(c) of as-deposited amorphous GCT to W was 3.9 x 10(-2) Omega cm(2). The value of rho(c) drastically decreased upon crystallization and crystalline GCT that annealed at 300 degrees C showed a rho(c) of 4.8 x 10(-6) Omega cm(2). The rho(c) contrast between amorphous (as-deposited) and crystalline (annealed at 300 degrees C) states was larger in GCT than in conventional Ge2Sb2Te5 (GST). Consequently, it was suggested from a calculation based on a simple vertical structure memory cell model that a GCT memory cell shows a four times larger resistance contrast than a GST memory cell. (C) 2016 Elsevier Ltd. All rights reserved. | en_US |
dc.description.sponsorship | The authors thank Dr. P. Fons of AIST, Japan, for help in the preparation of the manuscript. This work was supported by KAKENHI (Grant no. 15H04113) and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, CT and Future Planning (NRF-2015R1A2A2A01007289). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCI LTD | en_US |
dc.subject | THIN-FILMS | en_US |
dc.subject | GE2SB2TE5 | en_US |
dc.title | Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory | en_US |
dc.type | Article | en_US |
dc.relation.volume | 47 | - |
dc.identifier.doi | 10.1016/j.mssp.2016.02.006 | - |
dc.relation.page | 1-6 | - |
dc.relation.journal | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - |
dc.contributor.googleauthor | Shindo, S. | - |
dc.contributor.googleauthor | Sutou, Y. | - |
dc.contributor.googleauthor | Koike, J. | - |
dc.contributor.googleauthor | Saito, Y. | - |
dc.contributor.googleauthor | Song, Y. -H. | - |
dc.relation.code | 2016001201 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | yhsong2008 | - |
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