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Resource-Efficient SRAM-Based Ternary Content Addressable Memory

Title
Resource-Efficient SRAM-Based Ternary Content Addressable Memory
Author
백상현
Keywords
Field-programmable gate array (FPGA); memory architecture; memory-throughput tradeoff; SRAM-based ternary content addressable memory (TCAM); static random access memory (SRAM); ARCHITECTURES; POWER; TCAM
Issue Date
2017-04
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, v. 25, No. 4, Page. 1583-1587
Abstract
Static random access memory (SRAM)-based ternary content addressable memory (TCAM) offers TCAM functionality by emulating it with SRAM. However, this emulation suffers from reduced memory efficiency while mapping the TCAM table on SRAM units. This is due to the limited capacity of the physical addresses in the SRAM unit. This brief offers a novel memory architecture called a resource-efficient SRAM-based TCAM (REST), which emulates TCAM functionality using optimal resources. The SRAM unit is divided into multiple virtual blocks to store the address information presented in the TCAM table. This approach virtually increases the overall address space of the SRAM unit, mapping a greater portion of the TCAM table in SRAM and increasing the overall emulated TCAM bits/SRAM at the cost of reduced throughput. A 72 x 28-bit REST consumes only one 36-kbit SRAM and a few distributed RAMs via implementation on a Xilinx Kintex-7 field-programmable gate array. It uses only 3.5% of the memory resources compared with a conventional SRAM-based TCAM (hybrid-partitioned TCAM).
URI
https://ieeexplore.ieee.org/document/7797247/https://repository.hanyang.ac.kr/handle/20.500.11754/72009
ISSN
1063-8210; 1557-9999
DOI
10.1109/TVLSI.2016.2636294
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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