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dc.contributor.author백상현-
dc.date.accessioned2018-06-12T00:14:51Z-
dc.date.available2018-06-12T00:14:52Z-
dc.date.issued2017-04-
dc.identifier.citationIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, v. 25, No. 4, Page. 1583-1587en_US
dc.identifier.issn1063-8210-
dc.identifier.issn1557-9999-
dc.identifier.urihttps://ieeexplore.ieee.org/document/7797247/-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/72009-
dc.description.abstractStatic random access memory (SRAM)-based ternary content addressable memory (TCAM) offers TCAM functionality by emulating it with SRAM. However, this emulation suffers from reduced memory efficiency while mapping the TCAM table on SRAM units. This is due to the limited capacity of the physical addresses in the SRAM unit. This brief offers a novel memory architecture called a resource-efficient SRAM-based TCAM (REST), which emulates TCAM functionality using optimal resources. The SRAM unit is divided into multiple virtual blocks to store the address information presented in the TCAM table. This approach virtually increases the overall address space of the SRAM unit, mapping a greater portion of the TCAM table in SRAM and increasing the overall emulated TCAM bits/SRAM at the cost of reduced throughput. A 72 x 28-bit REST consumes only one 36-kbit SRAM and a few distributed RAMs via implementation on a Xilinx Kintex-7 field-programmable gate array. It uses only 3.5% of the memory resources compared with a conventional SRAM-based TCAM (hybrid-partitioned TCAM).en_US
dc.description.sponsorshipThis work was supported in part by the Ministry of Trade, Industry & Energy under Grant 10052875 and in part by the Korea Semiconductor Research Consortium support program for the development of the future semiconductor device.en_US
dc.language.isoen_USen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.subjectField-programmable gate array (FPGA)en_US
dc.subjectmemory architectureen_US
dc.subjectmemory-throughput tradeoffen_US
dc.subjectSRAM-based ternary content addressable memory (TCAM)en_US
dc.subjectstatic random access memory (SRAM)en_US
dc.subjectARCHITECTURESen_US
dc.subjectPOWERen_US
dc.subjectTCAMen_US
dc.titleResource-Efficient SRAM-Based Ternary Content Addressable Memoryen_US
dc.typeArticleen_US
dc.relation.no4-
dc.relation.volume25-
dc.identifier.doi10.1109/TVLSI.2016.2636294-
dc.relation.page1583-1587-
dc.relation.journalIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS-
dc.contributor.googleauthorAhmed, Ali-
dc.contributor.googleauthorPark, Kyungbae-
dc.contributor.googleauthorBaeg, Sanghyeon-
dc.relation.code2017006097-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF ENGINEERING SCIENCES[E]-
dc.sector.departmentDIVISION OF ELECTRICAL ENGINEERING-
dc.identifier.pidbau-
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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