The effects of organic material-treated SiO2 dielectric surfaces on the electrical characteristics of inorganic amorphous In-Ga-Zn-O thin film transistors
- Title
- The effects of organic material-treated SiO2 dielectric surfaces on the electrical characteristics of inorganic amorphous In-Ga-Zn-O thin film transistors
- Author
- 장재영
- Keywords
- SELF-ASSEMBLED MONOLAYERS; FIELD-EFFECT TRANSISTORS; OXIDE SEMICONDUCTORS
- Issue Date
- 2012-03
- Publisher
- Amer Physical SOC
- Citation
- Applied Physics Letters, 2012, 100(10), 102110
- Abstract
- We investigated the influence of organic dielectric surfaces on the electrical characteristics of inorganic amorphous indium-gallium-zinc oxide (a-IGZO)-based thin film transistors (TFTs). To modify the dielectric surface, various self-assembled monolayers and polymer thin films with different functional groups were introduced. Electrical measurements of the a-IGZO TFTs using surface-modified gate dielectrics revealed that the threshold voltages shifted toward positive values as the surface functional groups attract more electrons in the a-IGZO thin films. These results indicate that the channel conductance and carrier density of a-IGZO TFTs could be tuned by simple modification of the dielectric surfaces with organic materials. (C) 2012 American Institute of Physics. [http://dx.doi.org.access.hanyang.ac.kr/10.1063/1.3691920]
- URI
- https://aip.scitation.org/doi/10.1063/1.3691920https://repository.hanyang.ac.kr/handle/20.500.11754/69496
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3691920
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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