Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진섭 | - |
dc.date.accessioned | 2017-03-29T02:04:59Z | - |
dc.date.available | 2017-03-29T02:04:59Z | - |
dc.date.issued | 2015-07 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 15, NO 7, Page. 5211-5214 | en_US |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | http://www.ingentaconnect.com/content/asp/jnn/2015/00000015/00000007/art00073 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/26405 | - |
dc.description.abstract | We report the improvement in optical and electrical properties of GaN-based green light-emitting diodes (LEDs) with nano-sized etch pits formed by the surface chemical etching. In order to control the density and sizes of etch pits formed on top surface of green LEDs, H3PO4 solution is used as a etchant with different etching time. When the etching time was increased from 0 min to 20 min, both the etch pit size and density were gradually increased. The improvement of extraction efficiency of LEDs using surface etching method can be attributed to the enlarged escape angle of generated photon by roughened p-GaN surface. The finite-difference time-domain (FDTD) simulation results well agreed with experimentally observed results. Moreover, the LED with etched p-GaN surface for 5 min shows the lowest leakage current value and the further increase of etching time resulting in increase of densities of the large-sized etch pit makes the degradation of electrical properties of LEDs. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (NRF-2012R1A1A1041930). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | en_US |
dc.subject | Light-Emitting Diodes (LEDs) | en_US |
dc.subject | Extraction Efficiency | en_US |
dc.subject | Leakage Current | en_US |
dc.subject | Chemical Etching | en_US |
dc.title | Enhancement of Device Performances in GaN-Based Light-Emitting Diodes Using Nano-Sized Surface Pit | en_US |
dc.type | Article | en_US |
dc.relation.no | 7 | - |
dc.relation.volume | 15 | - |
dc.identifier.doi | 10.1166/jnn.2015.10363 | - |
dc.relation.page | 5211-5214 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Yeon, SeungHwan | - |
dc.contributor.googleauthor | Son, Taejoon | - |
dc.contributor.googleauthor | Shim, Dong Su | - |
dc.contributor.googleauthor | Jung, kyung-Young | - |
dc.contributor.googleauthor | Park, Jinsub | - |
dc.relation.code | 2015003357 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jinsubpark | - |
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