205 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author박진섭-
dc.date.accessioned2017-03-29T02:04:59Z-
dc.date.available2017-03-29T02:04:59Z-
dc.date.issued2015-07-
dc.identifier.citationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 15, NO 7, Page. 5211-5214en_US
dc.identifier.issn1533-4880-
dc.identifier.issn1533-4899-
dc.identifier.urihttp://www.ingentaconnect.com/content/asp/jnn/2015/00000015/00000007/art00073-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/26405-
dc.description.abstractWe report the improvement in optical and electrical properties of GaN-based green light-emitting diodes (LEDs) with nano-sized etch pits formed by the surface chemical etching. In order to control the density and sizes of etch pits formed on top surface of green LEDs, H3PO4 solution is used as a etchant with different etching time. When the etching time was increased from 0 min to 20 min, both the etch pit size and density were gradually increased. The improvement of extraction efficiency of LEDs using surface etching method can be attributed to the enlarged escape angle of generated photon by roughened p-GaN surface. The finite-difference time-domain (FDTD) simulation results well agreed with experimentally observed results. Moreover, the LED with etched p-GaN surface for 5 min shows the lowest leakage current value and the further increase of etching time resulting in increase of densities of the large-sized etch pit makes the degradation of electrical properties of LEDs.en_US
dc.description.sponsorshipThis research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (NRF-2012R1A1A1041930).en_US
dc.language.isoenen_US
dc.publisherAMER SCIENTIFIC PUBLISHERSen_US
dc.subjectLight-Emitting Diodes (LEDs)en_US
dc.subjectExtraction Efficiencyen_US
dc.subjectLeakage Currenten_US
dc.subjectChemical Etchingen_US
dc.titleEnhancement of Device Performances in GaN-Based Light-Emitting Diodes Using Nano-Sized Surface Piten_US
dc.typeArticleen_US
dc.relation.no7-
dc.relation.volume15-
dc.identifier.doi10.1166/jnn.2015.10363-
dc.relation.page5211-5214-
dc.relation.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.contributor.googleauthorYeon, SeungHwan-
dc.contributor.googleauthorSon, Taejoon-
dc.contributor.googleauthorShim, Dong Su-
dc.contributor.googleauthorJung, kyung-Young-
dc.contributor.googleauthorPark, Jinsub-
dc.relation.code2015003357-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidjinsubpark-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE