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Enhancement of Device Performances in GaN-Based Light-Emitting Diodes Using Nano-Sized Surface Pit

Title
Enhancement of Device Performances in GaN-Based Light-Emitting Diodes Using Nano-Sized Surface Pit
Author
박진섭
Keywords
Light-Emitting Diodes (LEDs); Extraction Efficiency; Leakage Current; Chemical Etching
Issue Date
2015-07
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 15, NO 7, Page. 5211-5214
Abstract
We report the improvement in optical and electrical properties of GaN-based green light-emitting diodes (LEDs) with nano-sized etch pits formed by the surface chemical etching. In order to control the density and sizes of etch pits formed on top surface of green LEDs, H3PO4 solution is used as a etchant with different etching time. When the etching time was increased from 0 min to 20 min, both the etch pit size and density were gradually increased. The improvement of extraction efficiency of LEDs using surface etching method can be attributed to the enlarged escape angle of generated photon by roughened p-GaN surface. The finite-difference time-domain (FDTD) simulation results well agreed with experimentally observed results. Moreover, the LED with etched p-GaN surface for 5 min shows the lowest leakage current value and the further increase of etching time resulting in increase of densities of the large-sized etch pit makes the degradation of electrical properties of LEDs.
URI
http://www.ingentaconnect.com/content/asp/jnn/2015/00000015/00000007/art00073http://hdl.handle.net/20.500.11754/26405
ISSN
1533-4880; 1533-4899
DOI
10.1166/jnn.2015.10363
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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