Endurance improvement due to rapid thermal annealing (RTA) of a TaO (x) thin film in an oxygen ambient
- Title
- Endurance improvement due to rapid thermal annealing (RTA) of a TaO (x) thin film in an oxygen ambient
- Author
- 전형탁
- Keywords
- RRAM; TaOx; Annealing
- Issue Date
- 2015-03
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 66, NO 5, Page. 721-725
- Abstract
- As the device size is scaled down, the physical size limit is an issue that limits conventional chargebased memories. Thus, many academic studies have focused on investigating alternative non-volatile memories (NVMs). One NVM candidate is a resistive random access memory (RRAM), which has a simple structure and can be densified with a crossbar array structure. The resistive-switching characteristic of the Pt/annealed-TaO (x) /TiN structure was investigated in this research. Annealing at 300A degrees C in an oxygen ambient changed the phase of the TaO (x) layer from TaO2-y to Ta2O5-z . We investigated this change by using X-ray diffraction. The Ta2O5 thin layer, which was formed by annealing, produced a reliable conducting filament in the annealed-TaO (x) layer and improved the device characteristics.
- URI
- http://link.springer.com/article/10.3938/jkps.66.721http://hdl.handle.net/20.500.11754/22757
- ISSN
- 0374-4884; 1976-8524
- DOI
- 10.3938/jkps.66.721
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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