TY - JOUR AU - 전형탁 DA - 2015/03 PY - 2015 UR - http://link.springer.com/article/10.3938/jkps.66.721 UR - http://hdl.handle.net/20.500.11754/22757 AB - As the device size is scaled down, the physical size limit is an issue that limits conventional chargebased memories. Thus, many academic studies have focused on investigating alternative non-volatile memories (NVMs). One NVM candidate is a resistive random access memory (RRAM), which has a simple structure and can be densified with a crossbar array structure. The resistive-switching characteristic of the Pt/annealed-TaO (x) /TiN structure was investigated in this research. Annealing at 300A degrees C in an oxygen ambient changed the phase of the TaO (x) layer from TaO2-y to Ta2O5-z . We investigated this change by using X-ray diffraction. The Ta2O5 thin layer, which was formed by annealing, produced a reliable conducting filament in the annealed-TaO (x) layer and improved the device characteristics. PB - KOREAN PHYSICAL SOC KW - RRAM KW - TaOx KW - Annealing TI - Endurance improvement due to rapid thermal annealing (RTA) of a TaO (x) thin film in an oxygen ambient IS - 5 VL - 66 DO - 10.3938/jkps.66.721 T2 - JOURNAL OF THE KOREAN PHYSICAL SOCIETY ER -