Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전형탁 | - |
dc.date.accessioned | 2016-08-25T00:38:03Z | - |
dc.date.available | 2016-08-25T00:38:03Z | - |
dc.date.issued | 2015-03 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 66, NO 5, Page. 721-725 | en_US |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.issn | 1976-8524 | - |
dc.identifier.uri | http://link.springer.com/article/10.3938/jkps.66.721 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/22757 | - |
dc.description.abstract | As the device size is scaled down, the physical size limit is an issue that limits conventional chargebased memories. Thus, many academic studies have focused on investigating alternative non-volatile memories (NVMs). One NVM candidate is a resistive random access memory (RRAM), which has a simple structure and can be densified with a crossbar array structure. The resistive-switching characteristic of the Pt/annealed-TaO (x) /TiN structure was investigated in this research. Annealing at 300A degrees C in an oxygen ambient changed the phase of the TaO (x) layer from TaO2-y to Ta2O5-z . We investigated this change by using X-ray diffraction. The Ta2O5 thin layer, which was formed by annealing, produced a reliable conducting filament in the annealed-TaO (x) layer and improved the device characteristics. | en_US |
dc.description.sponsorship | National Research Foundation of Korea (NRF) - Korean Government's (Ministry of Education, Science and Technology) | en_US |
dc.language.iso | en | en_US |
dc.publisher | KOREAN PHYSICAL SOC | en_US |
dc.subject | RRAM | en_US |
dc.subject | TaOx | en_US |
dc.subject | Annealing | en_US |
dc.title | Endurance improvement due to rapid thermal annealing (RTA) of a TaO (x) thin film in an oxygen ambient | en_US |
dc.type | Article | en_US |
dc.relation.no | 5 | - |
dc.relation.volume | 66 | - |
dc.identifier.doi | 10.3938/jkps.66.721 | - |
dc.relation.page | 721-725 | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.googleauthor | Hong, Junghyup | - |
dc.contributor.googleauthor | Jang, Woochool | - |
dc.contributor.googleauthor | Song, Hyoseok | - |
dc.contributor.googleauthor | Kang, Chunho | - |
dc.contributor.googleauthor | Jeon, Hyeongtag | - |
dc.contributor.googleauthor | Jeon, Heeyoung | - |
dc.contributor.googleauthor | Park, Jingyu | - |
dc.contributor.googleauthor | Kim, Hyunjung | - |
dc.contributor.googleauthor | Kim, Honggi | - |
dc.relation.code | 2015000007 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | hjeon | - |
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