Switching layer optimization in Co-based CBRAM for˃ 105 memory window in sub-100 µA regime
- Title
- Switching layer optimization in Co-based CBRAM for˃ 105 memory window in sub-100 µA regime
- Author
- 강보수
- Keywords
- Conductive-bridging random access memory (CBRAM); Low-current operation; Hygroscopic oxide; Large memory window
- Issue Date
- 2024-06-17
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Citation
- SOLID-STATE ELECTRONICS, v. 219, article no. 108964, page. 1-4
- Abstract
- Co/HfO2-based CBRAM stacks are optimized to enlarge the memory window for low-current (50 µA) operation. First, we dope the switching layer with Si to decrease the pristine current, thus enlarging the memory window. Then, we reduce the forming voltage by scaling the Si-doped HfO2 thickness. Finally, we extend the endurance lifetime and reduce the write time by introducing a hygroscopic oxide, LaSiO, in combination with HfSiO, to enhance Co ion hopping through hydroxyl groups. We further outline the important role of the position of the hygroscopic layer with respect to the Co active electrode in enlarging the memory window of the CBRAM device up to > 105.
- URI
- https://www.sciencedirect.com/science/article/pii/S0038110124001138https://repository.hanyang.ac.kr/handle/20.500.11754/191244
- ISSN
- 0038-1101
- DOI
- https://doi.org/10.1016/j.sse.2024.108964
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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