Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 강보수 | - |
dc.date.accessioned | 2024-08-05T04:11:24Z | - |
dc.date.available | 2024-08-05T04:11:24Z | - |
dc.date.issued | 2024-06-17 | - |
dc.identifier.citation | SOLID-STATE ELECTRONICS, v. 219, article no. 108964, page. 1-4 | en_US |
dc.identifier.issn | 0038-1101 | en_US |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0038110124001138 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/191244 | - |
dc.description.abstract | Co/HfO2-based CBRAM stacks are optimized to enlarge the memory window for low-current (50 µA) operation. First, we dope the switching layer with Si to decrease the pristine current, thus enlarging the memory window. Then, we reduce the forming voltage by scaling the Si-doped HfO2 thickness. Finally, we extend the endurance lifetime and reduce the write time by introducing a hygroscopic oxide, LaSiO, in combination with HfSiO, to enhance Co ion hopping through hydroxyl groups. We further outline the important role of the position of the hygroscopic layer with respect to the Co active electrode in enlarging the memory window of the CBRAM device up to > 105. | en_US |
dc.description.sponsorship | This research was supported by the MOTIE (Ministry of Trade, Industry, and Energy) in Korea, under the Fostering Global Talents for Innovative Growth Program (P0008745) supervised by the Korea Institute for Advancement of Technology (KIAT). This project has also received funding from the Electronic Component Systems for European Leadership Joint undertaking under grant agreement No 692519. This Joint undertaking receives support from the European Union’s Horizon 2020 research and innovation programme and Belgium, Germany, France, Netherlands, Poland, United Kingdom. | en_US |
dc.language | en_US | en_US |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | en_US |
dc.relation.ispartofseries | v. 219, article no. 108964;1-4 | - |
dc.subject | Conductive-bridging random access memory (CBRAM) | en_US |
dc.subject | Low-current operation | en_US |
dc.subject | Hygroscopic oxide | en_US |
dc.subject | Large memory window | en_US |
dc.title | Switching layer optimization in Co-based CBRAM for˃ 105 memory window in sub-100 µA regime | en_US |
dc.type | Article | en_US |
dc.relation.volume | 219 | - |
dc.identifier.doi | https://doi.org/10.1016/j.sse.2024.108964 | en_US |
dc.relation.page | 108964-108967 | - |
dc.relation.journal | SOLID-STATE ELECTRONICS | - |
dc.contributor.googleauthor | Cho, Yongjun | - |
dc.contributor.googleauthor | Kang, Bo Soo | - |
dc.contributor.googleauthor | Kumbhare, Pankaj | - |
dc.contributor.googleauthor | Delhougne, Romain | - |
dc.contributor.googleauthor | Nyns, Laura | - |
dc.contributor.googleauthor | Mao, Ming | - |
dc.contributor.googleauthor | Goux, Ludovic | - |
dc.contributor.googleauthor | Kar, Gouri Sankar | - |
dc.contributor.googleauthor | Belmonte, Attilio | - |
dc.relation.code | 2024003383 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | bosookang | - |
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