Native defect clustering-induced carrier localization centers leading to a reduction of performance in Ga0.70In0.30N/GaN quantum wells
- Title
- Native defect clustering-induced carrier localization centers leading to a reduction of performance in Ga0.70In0.30N/GaN quantum wells
- Author
- 신동수
- Issue Date
- 2023-04-26
- Publisher
- OPTICA PUBLISHING GROUP
- Citation
- OPTICS EXPRESS, v. 31, NO 10, Page. 15779-15790
- Abstract
- In this study, we aimed to better understand the mechanism for creating carrier localization centers (CLCs) in Ga0.70In0.30N/GaN quantum wells (QWs) and examine their impacts on device performance. Particularly, we focused on the incorporation of native defects into the QWs as a main cause of the mechanism behind the CLC creation. For this purpose,
we prepared two GaInN-based LED samples with and without pre-trimethylindium (TMIn) In this study, we aimed to better understand the mechanism for creating carrier localization centers (CLCs) in Ga0.70In0.30N/GaN quantum wells (QWs) and examine their impacts on device performance. Particularly, we focused on the incorporation of native defects into the QWs as a main cause of the mechanism behind the CLC creation. For this purpose, we prepared two GaInN-based LED samples with and without pre-trimethylindium (TMIn) flow-treated QWs. Here, the QWs were subjected to a pre-TMIn flow treatment to control the incorporation of defects/impurities in the QWs. In an effort to investigate how the pre-TMIn flow treatment affects the incorporation of native defects into the QWs, we employed steadystate photo-capacitance and photo-assisted capacitance-voltage measurements, and acquired high-resolution micro-charge-coupled device images. The experimental results showed that CLC creation in the QWs during growth is closely related to the native defects, most likely VN-related defects/complexes, since they have a strong affinity to In atoms and the nature of clustering. Moreover, the CLC creation is fatal to the performance of the yellow-red QWs since they simultaneously increase the non-radiative recombination rate, decrease the radiative recombination rate, and increase operating voltage—unlike blue QWs.
- URI
- https://information.hanyang.ac.kr/#/eds/detail?an=000996287000005&dbId=edswschttps://repository.hanyang.ac.kr/handle/20.500.11754/190081
- ISSN
- 1094-4087
- DOI
- 10.1364/OE.486721
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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