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Issue DateTitleAuthor(s)
2020-10Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis신동수
2020-10Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis심종인
2020-10Investigation of electrical performance and operation stability of RF-sputtered InSnZnO thin film transistors by oxygen-ambient rapid thermal annealing김재균
2020-07Direct generation of the first-radial-order Laguerre-Gaussian mode in a Nd:YVO(4)laser incorporating a core-ring-shaped pump fibre김지원
2020-07Topologically ordered zigzag nanoribbon: e/2 fractional edge charge, spin-charge separation, and ground-stage degeneracy차민철
2020-09Investigation of photodarkening in tandem-pumped Yb-doped fibers김지원
2020-09Moire potential impedes interlayer exciton diffusion in van der Waals heterostructures김수은
2020-09Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation심종인
2020-09Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation신동수
2020-06Origin of high quantum efficiency in Si-based homoepitaxial InGaN/GaN light-emitting diodes김재균
2020-01Active efficiency as a key parameter for understanding the efficiency droop in InGaN-based light-emitting diodes신동수
2020-01Review—Active Efficiency as a Key Parameter for Understanding the Efficiency Droop in InGaN-Based Light-Emitting Diodes심종인
2020-01Improvement of The Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe-Type n-Contact and Reflective Bonding Pad심종인
2020-02Highly Efficient Excitonic Recombination of Non-polar (11(2)over-bar0) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy김재균
2020-02Simulation study of a monolithic III-V/Si V-groove carrier depletion optical phase shifter김영현
2020-02Piezoelectric field in InGaN-based quantum wells grown on c-plane sapphire substrates measured by electroreflectance spectroscopy: from near-ultraviolet to green spectra심종인
2020-03Piezoelectric field in InGaN-based quantum wells grown on c-plane sapphire substrates measured by electroreflectance spectroscopy: from near-ultraviolet to green spectra신동수
2020-03Effect of Interface State Density of the AlGaN Electron Blocking Layer/GaN Barrier Layer in InGaN Blue Light-Emitting Diodes심종인
2000-08광모드변환기가 집적된 1.3㎛ SSC-FP-LD 제작 및 특성 해석심종인
2000-08S-parameter-Measurement-Based High-Speed Signal Transient Characterization of VLSI Interconnects on SiO2-Si Substrate심종인

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