Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신동수 | - |
dc.date.accessioned | 2024-04-30T00:35:32Z | - |
dc.date.available | 2024-04-30T00:35:32Z | - |
dc.date.issued | 2023-04-26 | - |
dc.identifier.citation | OPTICS EXPRESS, v. 31, NO 10, Page. 15779-15790 | en_US |
dc.identifier.issn | 1094-4087 | en_US |
dc.identifier.uri | https://information.hanyang.ac.kr/#/eds/detail?an=000996287000005&dbId=edswsc | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/190081 | - |
dc.description.abstract | In this study, we aimed to better understand the mechanism for creating carrier localization centers (CLCs) in Ga0.70In0.30N/GaN quantum wells (QWs) and examine their impacts on device performance. Particularly, we focused on the incorporation of native defects into the QWs as a main cause of the mechanism behind the CLC creation. For this purpose, we prepared two GaInN-based LED samples with and without pre-trimethylindium (TMIn) In this study, we aimed to better understand the mechanism for creating carrier localization centers (CLCs) in Ga0.70In0.30N/GaN quantum wells (QWs) and examine their impacts on device performance. Particularly, we focused on the incorporation of native defects into the QWs as a main cause of the mechanism behind the CLC creation. For this purpose, we prepared two GaInN-based LED samples with and without pre-trimethylindium (TMIn) flow-treated QWs. Here, the QWs were subjected to a pre-TMIn flow treatment to control the incorporation of defects/impurities in the QWs. In an effort to investigate how the pre-TMIn flow treatment affects the incorporation of native defects into the QWs, we employed steadystate photo-capacitance and photo-assisted capacitance-voltage measurements, and acquired high-resolution micro-charge-coupled device images. The experimental results showed that CLC creation in the QWs during growth is closely related to the native defects, most likely VN-related defects/complexes, since they have a strong affinity to In atoms and the nature of clustering. Moreover, the CLC creation is fatal to the performance of the yellow-red QWs since they simultaneously increase the non-radiative recombination rate, decrease the radiative recombination rate, and increase operating voltage—unlike blue QWs. | en_US |
dc.description.sponsorship | Nano & Material Technology Development Program through the National Research Foundation of Korea funded by Ministry of Science and ICT, South Korea (2021M3D1A2048623) | en_US |
dc.language | en_US | en_US |
dc.publisher | OPTICA PUBLISHING GROUP | en_US |
dc.relation.ispartofseries | v. 31, NO 10;15779-15790 | - |
dc.title | Native defect clustering-induced carrier localization centers leading to a reduction of performance in Ga0.70In0.30N/GaN quantum wells | en_US |
dc.type | Article | en_US |
dc.relation.no | 10 | - |
dc.relation.volume | 31 | - |
dc.identifier.doi | 10.1364/OE.486721 | en_US |
dc.relation.page | 15779-15790 | - |
dc.relation.journal | OPTICS EXPRESS | - |
dc.contributor.googleauthor | Han, Dong-Pyo | - |
dc.contributor.googleauthor | Kim, Jiwon | - |
dc.contributor.googleauthor | Shin, Dong-Soo | - |
dc.contributor.googleauthor | Shim, Jong-In | - |
dc.relation.code | 2023041201 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF PHOTONICS AND NANOELECTRONICS | - |
dc.identifier.pid | dshin | - |
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