Write Recovery Time Degradation by Thermal Neutrons in DDR4 DRAM Components

Abstract

In this study, a thermal neutron (TN) radiation test was conducted for DRAM devices of 1y nm technology. Accordingly, the write recovery time (tWR) degradation was observed to range from 1-ns (degradation) to more than 15 ns (failure). Specifically, permanent timing degradation is expected, owing to secondary particles generated from the interactions of 10B and TN. The samples from two manufacturers were compared and exhibited an 8.9 times maximum difference in the degradation cross-section.