Rate equation analysis of efficiency droop in InGaN light-emitting diodes
- Title
- Rate equation analysis of efficiency droop in InGaN light-emitting diodes
- Author
- 심종인
- Keywords
- Auger effect; electron-hole recombination; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; wide band gap semiconductors
- Issue Date
- 2009-08
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v. 95, NO. 8, article no. 081114, Page. 1-4
- Abstract
- Efficiency droop in InGaN light-emitting diodes (LEDs) is analyzed based on the rate equation model. By using the peak point of the efficiency versus current-density relation as the parameters of the rate equation analysis, internal quantum efficiency and each recombination current at arbitrary current density can be unambiguously determined without any knowledge of A, B, and C coefficients. The theoretical analysis is compared with measured efficiency of a LED sample and good agreement between the model and experiment is found. The investigation of recombination coefficients shows that Auger recombination alone is not sufficient to explain the efficiency droop of InGaN LEDs.
- URI
- https://aip.scitation.org/doi/10.1063/1.3216578https://repository.hanyang.ac.kr/handle/20.500.11754/184069
- ISSN
- 0003-6951;1077-3118
- DOI
- 10.1063/1.3216578
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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