THERMALLY STABLE TERNARY TITANIUM-TANTALUM SILICIDE FORMATION ON POLYCRYSTALLINE SILICON
- Title
- THERMALLY STABLE TERNARY TITANIUM-TANTALUM SILICIDE FORMATION ON POLYCRYSTALLINE SILICON
- Author
- 오재응
- Issue Date
- 1993-07
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v. 74, NO. 2, Page. 1456-1458
- Abstract
- A material for thermally stable self-aligned silicide technologies has been developed using sequentially deposited Ti/Ta on polycrystalline silicon. At lower annealing temperatures below 1000-degrees-C two separate phases were found by cross-sectional transmission electron microscopy to exist in the form of bilayer TiSi2/TaSi2. The formation of a ternary phase (TiTa)Si2 has been observed at a higher temperature of 1000-degrees-C. Consequently, the ternary (TiTa) Si2 layer could be kept extremely flat, with a sheet resistance of 5 OMEGA/square, even after 1000-degrees-C, 30 min annealing. Cross-sectional transmission electron micrographs of the structure clearly reveal that no agglomeration occurs during the heat treatment.
- URI
- https://aip.scitation.org/doi/10.1063/1.354861https://repository.hanyang.ac.kr/handle/20.500.11754/182783
- ISSN
- 0021-8979;1089-7550
- DOI
- 10.1063/1.354861
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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