AlSb/InAs/AlSb 양자우물 구조에서 InSb-like 계면의 전기적 특성
- Title
- AlSb/InAs/AlSb 양자우물 구조에서 InSb-like 계면의 전기적 특성
- Other Titles
- Electrical properties of InSb-like interface in AlSb/InAs/AlSb quantum-well
- Author
- 오재응
- Keywords
- InAs; AlSb; 계면; TEM; Hall 효과 측정; 전자이동도; Interface; Hall effect; Mobility
- Issue Date
- 2007-06
- Publisher
- 한국물리학회
- Citation
- 새물리, v. 54, NO. 6, Page. 555-560
- Abstract
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(2000).; We researched the electrical and the structural properties of the InSb-like top and bottom interfaces of an InAs layer in an AlSb/InAs/AlSb quantum-well structure grown on a GaAs (001) substrate by using molecular beam epitaxy. We investigated these properties by using reflection high-energy electron diffraction, transmission election microscopy, and Hall effect measurements. We obtained an electron mobility of 20,700 cm$^2$/V$\cdot$s at room temperature by using a combination of a 30-nm InAs well and InSb-like top and bottom interfaces. In addition, according to the measurement of the temperature dependence, the InAs well interface formed an InSb-like layer.
- URI
- https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART001062669https://repository.hanyang.ac.kr/handle/20.500.11754/182739
- ISSN
- 0374-4914;2289-0041
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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