Full metadata record
DC Field | Value | Language |
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dc.contributor.author | 오재응 | - |
dc.date.accessioned | 2023-07-10T01:17:18Z | - |
dc.date.available | 2023-07-10T01:17:18Z | - |
dc.date.issued | 2007-06 | - |
dc.identifier.citation | 새물리, v. 54, NO. 6, Page. 555-560 | - |
dc.identifier.issn | 0374-4914;2289-0041 | - |
dc.identifier.uri | https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART001062669 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/182739 | - |
dc.description.abstract | [1] Y. C. Kang, J. S. Choi, S. B. Park, S. H. Cho, J. S. Yoo and J. D. Lee, J. Aerosol Sci. 28, S541 (1997) [2] S. Okamoto and H. Yamamoto, J. Appl. Phys. 91, 5492 (2002). [3] L. Tian and S. I. Mho, Solid. State Commu. 125, 647 (2003). [4] H. Muta, K. Kurosaki and S. Yamanaka, J. Alloy. Compound 350, 292 (2003). [5] B. G. Almeida, A. Pietka and J. A. Mendes, Appl. Surface Sci. 238, 395 (2004). [6] S. S. Chadha, D. W. Smith, A. Vecht and C. S. Gibbons, 94 SDI Digest 51, 1 (1994). [7] S. Okamoto, H. Kobayashi and H. Yamamoto, J. Appl. Phys. 86, 5594 (1999). [8] S, Itoh, H. Toki, K. Tamura and F. Karaoka, Jpn. J. Appl. Phys. 38, 6387 (1999). [9] P. T. Diallo, K. Jeanlouis, P. Bontinaud, R. Mahiou and J. C. Cousseins, J. Alloy. Compd. 323, 218 (2001). [10] E. Pinel, P. Boutinaud and R. Mahiou, J. Alloy. Compound 380, 225 (2004). [11] H. Yamamoto and S. Okamoto, Display 21, 93 (2000). [12] J. K. Park, H. Ryu, H. D. Park and S. Y. Choi, J. Euro. Ceram. Soc. 21, 535 (2001). [13] J. C. Park, H. K. Moon, D. K. Kim, S. H. Byeon, B. C. Kim and K. S. Suh, Appl. Phys. Lett. 77, 14 (2000).; We researched the electrical and the structural properties of the InSb-like top and bottom interfaces of an InAs layer in an AlSb/InAs/AlSb quantum-well structure grown on a GaAs (001) substrate by using molecular beam epitaxy. We investigated these properties by using reflection high-energy electron diffraction, transmission election microscopy, and Hall effect measurements. We obtained an electron mobility of 20,700 cm$^2$/V$\cdot$s at room temperature by using a combination of a 30-nm InAs well and InSb-like top and bottom interfaces. In addition, according to the measurement of the temperature dependence, the InAs well interface formed an InSb-like layer. | - |
dc.language | ko | - |
dc.publisher | 한국물리학회 | - |
dc.subject | InAs | - |
dc.subject | AlSb | - |
dc.subject | 계면 | - |
dc.subject | TEM | - |
dc.subject | Hall 효과 측정 | - |
dc.subject | 전자이동도 | - |
dc.subject | Interface | - |
dc.subject | Hall effect | - |
dc.subject | Mobility | - |
dc.title | AlSb/InAs/AlSb 양자우물 구조에서 InSb-like 계면의 전기적 특성 | - |
dc.title.alternative | Electrical properties of InSb-like interface in AlSb/InAs/AlSb quantum-well | - |
dc.type | Article | - |
dc.relation.no | 6 | - |
dc.relation.volume | 54 | - |
dc.relation.page | 555-560 | - |
dc.relation.journal | 새물리 | - |
dc.contributor.googleauthor | 노영균 | - |
dc.contributor.googleauthor | 김영헌 | - |
dc.contributor.googleauthor | 오재응 | - |
dc.contributor.googleauthor | 임현식 | - |
dc.contributor.googleauthor | 김문덕 | - |
dc.contributor.googleauthor | 김송강 | - |
dc.sector.campus | E | - |
dc.sector.daehak | 공학대학 | - |
dc.sector.department | 전자공학부 | - |
dc.identifier.pid | joh | - |
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