Impact of Polarization Inside a Resist for ArF Immersion Lithography
- Title
- Impact of Polarization Inside a Resist for ArF Immersion Lithography
- Author
- 정영대
- Keywords
- Lithography; Lithography simulation; Immersion lithography; Finite-difference time domain; Polarization
- Issue Date
- 2009-04
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 54, NO. 4, Page. 1685.0-1691.0
- Abstract
- Immersion technology with new lens materials and new high-refractive fluids is the key technology to extend the resolution capability of existing 193-nm lithography below the 32-nm pattern formation, but it faces more pronounced polarization and reflection control issues. In this paper, for a wet system, the propagations of the transverse electric (TE) and the transverse magnetic (TM) waves inside a one-layer resist and a multi-layer resist are described by using the finite-difference-time-domain (FDTD) method with a multi-layer model and a transfer-matrix model, respectively. In the comparison with a dry system, the TE and the TM modes of the wet system are larger than those of the dry system. Inside the multi-layer resist, the TM and the TE modes change little at incident angle below 20 degrees. However, for a 45-nm pattern formation, no difference between the TM and the TE modes is found under the given conditions for incident angles below 20 degrees.
- URI
- https://www.jkps.or.kr/journal/view.html?volume=54&number=4&spage=1685&year=2009https://repository.hanyang.ac.kr/handle/20.500.11754/182160
- ISSN
- 0374-4884;1976-8524
- DOI
- 10.3938/jkps.54.1685
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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