Highly Reliable Selection Behavior with Controlled Ag Doping of Nano-polycrystalline ZnO Layer for 3D X-Point Framework
- Title
- Highly Reliable Selection Behavior with Controlled Ag Doping of Nano-polycrystalline ZnO Layer for 3D X-Point Framework
- Author
- 안진호
- Keywords
- 1S1R; Threshold switching selector; sputtering; polycrystalline ZnO; doping; 3D X-Point
- Issue Date
- 2022-01
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- IEEE Electron Device Letters, v. 43, NO. 1, Page. 21-24
- Abstract
- In this letter, a threshold switching (TS) selector with Ag doping-based nano-polycrystalline ZnO switching layer (SL) having (002) preferred orientation has been manifested, without incorporating an active Ag metal layer, using a facile co-sputtering deposition technique. The TS selectors with extremely controlled doping of ~0.14 at. % Ag concentration showed remarkable electroforming (EF)-free selection behavior such as gigantic selectivity (~10 11 ), extreme-low off -current (~10 fA), high on -current density (~1.6 MA/cm 2 ), ultra-steep switching slope (~0.8 mV/decade), satisfactory endurance (>10 6 ), fast switch- on speed (~38 ns) and relaxation speed (~64 ns), and high device yield (~90%). Furthermore, selector devices showed reproducible selection behavior with stable threshold voltage (V th ) having merely ~8% variances.
- URI
- https://ieeexplore.ieee.org/document/9627175https://repository.hanyang.ac.kr/handle/20.500.11754/178225
- ISSN
- 0741-3106;1558-0563
- DOI
- 10.1109/LED.2021.3130828
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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