Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2022-12-12T05:23:25Z | - |
dc.date.available | 2022-12-12T05:23:25Z | - |
dc.date.issued | 2022-01 | - |
dc.identifier.citation | IEEE Electron Device Letters, v. 43, NO. 1, Page. 21-24 | en_US |
dc.identifier.issn | 0741-3106;1558-0563 | en_US |
dc.identifier.uri | https://ieeexplore.ieee.org/document/9627175 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/178225 | - |
dc.description.abstract | In this letter, a threshold switching (TS) selector with Ag doping-based nano-polycrystalline ZnO switching layer (SL) having (002) preferred orientation has been manifested, without incorporating an active Ag metal layer, using a facile co-sputtering deposition technique. The TS selectors with extremely controlled doping of ~0.14 at. % Ag concentration showed remarkable electroforming (EF)-free selection behavior such as gigantic selectivity (~10 11 ), extreme-low off -current (~10 fA), high on -current density (~1.6 MA/cm 2 ), ultra-steep switching slope (~0.8 mV/decade), satisfactory endurance (>10 6 ), fast switch- on speed (~38 ns) and relaxation speed (~64 ns), and high device yield (~90%). Furthermore, selector devices showed reproducible selection behavior with stable threshold voltage (V th ) having merely ~8% variances. | en_US |
dc.description.sponsorship | This work was supported in part by the Semiconductor Research Corporation (SRC) through the Global Research Collaboration-Logic and Memory Devices (GRC-LMD) Program under Project 2823.001 and in part by the 2019 Research Grant from Kangwon National University. The review of this letter was arranged by Editor B. S. Doyle. | en_US |
dc.language | en | en_US |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | en_US |
dc.subject | 1S1R | en_US |
dc.subject | Threshold switching selector | en_US |
dc.subject | sputtering | en_US |
dc.subject | polycrystalline ZnO | en_US |
dc.subject | doping | en_US |
dc.subject | 3D X-Point | en_US |
dc.title | Highly Reliable Selection Behavior with Controlled Ag Doping of Nano-polycrystalline ZnO Layer for 3D X-Point Framework | en_US |
dc.type | Article | en_US |
dc.relation.no | 1 | - |
dc.relation.volume | 43 | - |
dc.identifier.doi | 10.1109/LED.2021.3130828 | en_US |
dc.relation.page | 21-24 | - |
dc.relation.journal | IEEE Electron Device Letters | - |
dc.contributor.googleauthor | Sahota, Akshay | - |
dc.contributor.googleauthor | Kim, Harrison Sejoon | - |
dc.contributor.googleauthor | Mohan, Jaidah | - |
dc.contributor.googleauthor | Jung, Yong Chan | - |
dc.contributor.googleauthor | Hernandez-Arriaga, Heber | - |
dc.contributor.googleauthor | Le, Dan N. | - |
dc.contributor.googleauthor | Kim, Si Joon | - |
dc.contributor.googleauthor | Lee, Jang-Sik | - |
dc.contributor.googleauthor | Ahn, Jinho | - |
dc.contributor.googleauthor | Kim, Jiyoung | - |
dc.sector.campus | S | - |
dc.sector.daehak | 공과대학 | - |
dc.sector.department | 신소재공학부 | - |
dc.identifier.pid | jhahn | - |
dc.identifier.orcid | https://orcid.org/0000-0001-8271-5998 | - |
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