Transferable, flexible white light-emitting diodes of GaN p–n junction microcrystals fabricated by remote epitaxy

Title
Transferable, flexible white light-emitting diodes of GaN p–n junction microcrystals fabricated by remote epitaxy
Author
박원일
Keywords
Flexible device; GaN; p–n junction; Remote epitaxy; Transfer; White light emitting diode
Issue Date
2021-08
Publisher
Elsevier Ltd
Citation
Nano Energy, v. 86, article no. 106075, Page. 1-12
Abstract
The remote epitaxy of GaN p–n homojunction microcrystals (μCs) is demonstrated for fabricating transferable, flexible white light-emitting diodes (WLEDs). The GaN p–n junction μCs are randomly grown on graphene-coated Al2O3(0001), which are then delaminated for mass-transfer onto conducting copper tape. The μCs-LED shows electrical rectification and white electroluminescence (EL) emission. The μCs-WLED exhibits reliable LED performances after repetitive bending deformations and cycling temperature environments. Based on the transferability, the μCs-WLEDs are patterned and assembled to matrix arrays, which exhibit homogeneous, reliable performances even at a bent form. We discuss that the origin of white EL emission is mixing of blue and yellow–red EL emissions from p-GaN and n-GaN sides, respectively, based on photoluminescence spectroscopic measurements. This study opens a way of fabricating the transferable, flexible, and modular light panels through remote epitaxy. © 2021 Elsevier Ltd
URI
https://www.sciencedirect.com/science/article/pii/S2211285521003323?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/178191
ISSN
2211-2855;2211-3282
DOI
10.1016/j.nanoen.2021.106075
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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