Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박원일 | - |
dc.date.accessioned | 2022-12-12T01:53:05Z | - |
dc.date.available | 2022-12-12T01:53:05Z | - |
dc.date.issued | 2021-08 | - |
dc.identifier.citation | Nano Energy, v. 86, article no. 106075, Page. 1-12 | en_US |
dc.identifier.issn | 2211-2855;2211-3282 | en_US |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S2211285521003323?via%3Dihub | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/178191 | - |
dc.description.abstract | The remote epitaxy of GaN p–n homojunction microcrystals (μCs) is demonstrated for fabricating transferable, flexible white light-emitting diodes (WLEDs). The GaN p–n junction μCs are randomly grown on graphene-coated Al2O3(0001), which are then delaminated for mass-transfer onto conducting copper tape. The μCs-LED shows electrical rectification and white electroluminescence (EL) emission. The μCs-WLED exhibits reliable LED performances after repetitive bending deformations and cycling temperature environments. Based on the transferability, the μCs-WLEDs are patterned and assembled to matrix arrays, which exhibit homogeneous, reliable performances even at a bent form. We discuss that the origin of white EL emission is mixing of blue and yellow–red EL emissions from p-GaN and n-GaN sides, respectively, based on photoluminescence spectroscopic measurements. This study opens a way of fabricating the transferable, flexible, and modular light panels through remote epitaxy. © 2021 Elsevier Ltd | en_US |
dc.description.sponsorship | This work was financially supported by the Basic Science Research Programs (NRF-2020R1F1A1074477) and Global Research and Development Center Program (2018K1A4A3A01064272) through the National Research Foundation (NRF) of South Korea. The authors also acknowledge the support of the Competency Development Program for Industry Specialist (P0012451) of Korea Institute for Advancement of Technology (KIAT) grant funded by the Ministry of Trade, Industry and Energy (MOTIE) of South Korea. | en_US |
dc.language | en | en_US |
dc.publisher | Elsevier Ltd | en_US |
dc.subject | Flexible device | en_US |
dc.subject | GaN | en_US |
dc.subject | p–n junction | en_US |
dc.subject | Remote epitaxy | en_US |
dc.subject | Transfer | en_US |
dc.subject | White light emitting diode | en_US |
dc.title | Transferable, flexible white light-emitting diodes of GaN p–n junction microcrystals fabricated by remote epitaxy | en_US |
dc.type | Article | en_US |
dc.relation.volume | 86 | - |
dc.identifier.doi | 10.1016/j.nanoen.2021.106075 | en_US |
dc.relation.page | 1-12 | - |
dc.relation.journal | Nano Energy | - |
dc.contributor.googleauthor | Jeong, Junseok | - |
dc.contributor.googleauthor | Jin, Dae Kwon | - |
dc.contributor.googleauthor | Choi, Joonghoon | - |
dc.contributor.googleauthor | Jang, Junho | - |
dc.contributor.googleauthor | Kang, Bong Kyun | - |
dc.contributor.googleauthor | Wang, Qingxiao | - |
dc.contributor.googleauthor | Park, Won Il | - |
dc.contributor.googleauthor | Jeong, Mun Seok | - |
dc.contributor.googleauthor | Bae, Byeong-Soo | - |
dc.contributor.googleauthor | Yang, Woo Seok | - |
dc.contributor.googleauthor | Kim, Moon J. | - |
dc.contributor.googleauthor | Hong, Young Joon | - |
dc.sector.campus | S | - |
dc.sector.daehak | 공과대학 | - |
dc.sector.department | 신소재공학부 | - |
dc.identifier.pid | wipark | - |
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