Hydrogen Impacts of PEALD InGaZnO TFTs Using SiOx Gate Insulators Deposited by PECVD and PEALD
- Title
- Hydrogen Impacts of PEALD InGaZnO TFTs Using SiOx Gate Insulators Deposited by PECVD and PEALD
- Author
- 정현준
- Keywords
- Oxide semiconductor; plasma-enhanced atomic layer deposition (PEALD); subchannel formation by hydrogen diffusion; thin-film transistors (TFTs)
- Issue Date
- 2020-10
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 67, no. 10, page. 4250-4255
- Abstract
- Amorphous indium gallium zinc oxide (IGZO) deposited by plasma-enhanced atomic layer deposition (PEALD) thin-film transistors (TFTs) was fabricated using SiO2 gate insulators synthesized via plasma-enhanced chemical vapor deposition (PECVD, device A) or PEALD (device B). The electrical performance of B devices was higher than that of device A. The mobilities of A and B deviceswere 19.39 and 21.11 cm(2)/Vs, and the subthreshold slopes were 0.25 and 0.22 V/decade, respectively. In addition, the device reliability of A devices shows an abnormal threshold voltage (V-th) shift of -1.25 V under positive bias temperature stress (PBTS), caused by hydrogen diffusion from the gate insulator to the channel region near the source/drain electrode. However, B devices had a normal Vth shift of +2.87 V. X-ray photoelectron spectroscopy (XPS) and Fourier-transforminfrared spectroscopy (FT-IR) results showed that PECVD SiO2 has a large amount of hydrogen bonding, such as Si-OH, compared to PEALD SiO2. Rutherford backscattering spectroscopy (RBS) and elastic recoil detection (ERD) measurement results confirmed that the hydrogen content of PECVD SiO2 was 2.24%, whereas that of PEALD SiO2 was lower at 1.45%.
- URI
- https://ieeexplore.ieee.org/document/9179008https://repository.hanyang.ac.kr/handle/20.500.11754/172087
- ISSN
- 0018-9383; 1557-9646
- DOI
- 10.1109/TED.2020.3017145
- Appears in Collections:
- RESEARCH INSTITUTE[S](부설연구소) > ETC
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